BLF278,深圳市德宏源电子有限公司

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BLF278

NXP射频功放管BLF278

VHF push-pull power MOS transistor

Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT262A1 balanced flange package with two ceramic caps. The mounting flange provides the common source connection for the transistors

特性和优势

High power gain
Easy power control
Good thermal stability
Gold metallization ensures excellent reliability

应用

Broadcast transmitters in the VHF frequency range.

参数10-500MHZ(HF/VHF/ISM)

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